Solid-state image sensing device and method of manufacturing the same

ABSTRACT

By selectively anisotropically etching a stack film formed to cover a plurality of photodiodes and a gate electrode layer of a MOS transistor, the stack film remains on each of the plurality of photodiodes to form a lower antireflection coating and the stack film remains on a sidewall of the gate electrode layer to form a sidewall Using the gate electrode layer and the sidewall as a mask, an impurity is introduced to form a source/drain region of the MOS transistor. After the impurity was introduced, an upper antireflection coating is formed at least on a lower antireflection coating At least any of the upper antireflection coating and the lower antireflection coating is etched such that the antireflection coatings on the two respective photodiodes are different in thickness from each other.

RELATED APPLICATIONS

This application is a Continuation application of U.S. Ser. No.14/713,866 filed May 15, 2015 which is a Divisional application of U.S.Ser. No. 14/257,746 filed Apr. 21, 2014, now U.S. Pat. No. 9,064,771,which is a Divisional application of U.S. Ser. No. 13/265,513 filed Oct.20, 2011, now U.S. Pat. No. 8,728,853, which is the U.S. National Phaseunder 35 U.S.C. §371 of International Application No. PCT/JP2009/058127,filed on Apr. 24, 2009, the disclosure of each is incorporated byreference herein.

TECHNICAL FIELD

The present invention relates to a solid-state image sensing device anda method of manufacturing the same, and particularly to a solid-stateimage sensing device having a photoelectric conversion portion and aninsulating gate field effect transistor portion and a method ofmanufacturing the same.

BACKGROUND ART

A solid-state image sensing device having a plurality of photodiodesserving as photoelectric conversion portions for incident light and aMOS (Metal Oxide Semiconductor) transistor serving as an insulating gatefield effect transistor portion is disclosed, for example, in JapanesePatent Laying-Open No. 2004-228425, Japanese Patent Laying-Open No.2008-041958, and the like.

Japanese Patent Laying-Open No. 2004-228425 above describes simultaneousformation of an antireflection coating for a photodiode and a sidewallalong the side of a gate of a MOS transistor for decreasing the numberof steps and simplification of the steps.

Japanese Patent Laying-Open No. 2008-041958, however, describes the factthat a thickness of the antireflection coating and a thickness of thesidewall cannot independently be controlled with the manufacturingmethod in Japanese Patent Laying-Open No. 2004-228425.

In this Japanese Patent Laying-Open No. 2008-041958, an antireflectioncoating and a sidewall are formed in the same step from an insulatingfilm including three layers of a lower layer, an intermediate layer andan upper layer. According to this publication, an index of refractionand a thickness of the antireflection coating are controlled by the twolayers of the lower and intermediate insulating films and a thickness ofthe sidewall is controlled by the three layers of the lower layer, theintermediate layer and the upper layer, so that each thickness of theantireflection coating and the sidewall can independently be controlled.

CITATION LIST Patent Literature PTL 1: Japanese Patent Laying-Open No.2004-228425 PTL 2: Japanese Patent Laying-Open No. 2008-041958 SUMMARYOF INVENTION Technical Problem

Generally, a width of a sidewall follows the scaling law. A thickness ofan antireflection coating, however, does not follow the scaling law,because an optimal structure is determined depending on a wavelength ofincident light. According to Japanese Patent Laying-Open No.2008-041958, however, a thickness of the antireflection coating is equalto or smaller than a width of the sidewall without exception. Therefore,if a width of the sidewall becomes smaller in accordance with thescaling law, a thickness of the antireflection coating should alsoaccordingly be made smaller. Thus, as a transistor is made smaller,application of this technique becomes difficult.

In addition, according to Japanese Patent Laying-Open No. 2008-041958,an index of refraction and a thickness of the antireflection coating areoptimally controlled by the two layers of the lower and intermediateinsulating films. In order to control the index of refraction of theantireflection coating only with the lower and intermediate insulatingfilms, however, an index of refraction of the upper insulating filmshould be as high as that of an interlayer insulating film on theantireflection coating, because, if the interlayer insulating film andthe upper insulating film are different from each other in index ofrefraction, reflection that occurs at an interface therebetween isunignorable. Therefore, in a case where it is desired that theantireflection coating includes three (or more) layers and the upperinsulating film is different in index of refraction from the interlayerinsulating film, the technique according to Japanese Patent Laying-OpenNo. 2008-041958 is not applicable in principle and restrictions inconnection with the antireflection coating are many.

Further, an optimal structure of the antireflection coating is differentdepending on a wavelength of incident light. Therefore, in a case wherelight receiving pixels are different for each of three primary colors ofR (Red), G (Green), and B (Blue) as in a general image sensing element,an antireflection coating is desirably optimized for each pixel. InJapanese Patent Laying-Open No. 2008-041958, however, the antireflectioncoating and the sidewall are formed in the same step and therefore theantireflection coatings are identical in thickness for all pixels of R,G and B due to restrictions imposed by the sidewall. Thus, theantireflection coating should inevitably be optimized for light having awavelength of any of R, G and B, and sufficient antireflection effectscannot be obtained for light having other wavelengths.

The present invention was made in view of the problems above, and anobject of the present invention is to provide a solid-state imagesensing device capable of adapting to reduction in size, having lessrestriction in connection with an antireflection coating, and optimizingan antireflection effect for each pixel, and a method of manufacturingthe same.

Solution to Problem

A method of manufacturing a solid-state image sensing device accordingto one embodiment of the present invention is a method of manufacturinga solid-state image sensing device including a plurality ofphotoelectric conversion portions constituting a plurality of pixels, aninsulating gate field effect transistor portion, and a plurality offirst films formed on the plurality of photoelectric conversion portionsrespectively, and the method includes the following steps.

A stack film constituted of a plurality of insulating films is formed tocover the plurality of photoelectric conversion portions and a gateelectrode layer of the insulating gate field effect transistor portion.By selectively anisotropically etching the stack film, the stack filmremains on each of the plurality of photoelectric conversion portions toform a lower film, and the stack film remains on a sidewall of the gateelectrode layer to form a sidewall insulating film. An impurity isintroduced into a region not covered with the gate electrode layer andthe sidewall insulating film, to thereby form a source/drain region ofan insulating gate field effect transistor. After introduction of theimpurity, an upper film is formed at least on the lower film. At leastany of the upper film and the lower film is etched such that the firstfilms on at least two photoelectric conversion portions of the pluralityof photoelectric conversion portions are different in thickness fromeach other.

Advantageous Effects of Invention

According to this embodiment, since a width of a sidewall insulatingfilm and a thickness of a first film can independently be controlled,adaptation to reduction in size is facilitated.

In addition, since an upper film is formed on a lower film after thesidewall insulating film and the lower film are formed from a stackfilm, restrictions imposed on the first film are lessened as comparedwith a case where the first film and the sidewall insulating film areformed in the same step.

Moreover, since the upper film is formed after the sidewall insulatingfilm and the lower film are formed from the stack film and at least anyof the lower film and the upper film is removed, antireflection effectscan be optimized for each pixel.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a plan view schematically showing a configuration of asolid-state image sensing device in Embodiment 1 of the presentinvention.

FIG. 2 is a circuit diagram showing a circuit configuration of thesolid-state image sensing device shown in FIG. 1.

FIG. 3 is a schematic cross-sectional view showing a first step in amethod of manufacturing a solid-state image sensing device in Embodiment1 of the present invention.

FIG. 4 is a schematic cross-sectional view showing a second step in themethod of manufacturing a solid-state image sensing device in Embodiment1 of the present invention.

FIG. 5 is a schematic cross-sectional view showing a third step in themethod of manufacturing a solid-state image sensing device in Embodiment1 of the present invention.

FIG. 6 is a schematic cross-sectional view showing a fourth step in themethod of manufacturing a solid-state image sensing device in Embodiment1 of the present invention.

FIG. 7 is a schematic cross-sectional view showing a fifth step in themethod of manufacturing a solid-state image sensing device in Embodiment1 of the present invention.

FIG. 8 is a schematic cross-sectional view showing a sixth step in themethod of manufacturing a solid-state image sensing device in Embodiment1 of the present invention.

FIG. 9 is a schematic cross-sectional view showing a seventh step in themethod of manufacturing a solid-state image sensing device in Embodiment1 of the present invention.

FIG. 10 is a schematic cross-sectional view showing an eighth step inthe method of manufacturing a solid-state image sensing device inEmbodiment 1 of the present invention.

FIG. 11 is a schematic cross-sectional view showing a ninth step in themethod of manufacturing a solid-state image sensing device in Embodiment1 of the present invention.

FIG. 12 is a schematic cross-sectional view showing a first step in amethod of manufacturing a solid-state image sensing device in Embodiment2 of the present invention.

FIG. 13 is a schematic cross-sectional view showing a second step in themethod of manufacturing a solid-state image sensing device in Embodiment2 of the present invention.

FIG. 14 is a schematic cross-sectional view showing a third step in themethod of manufacturing a solid-state image sensing device in Embodiment2 of the present invention.

FIG. 15 is a schematic cross-sectional view showing a fourth step in themethod of manufacturing a solid-state image sensing device in Embodiment2 of the present invention.

FIG. 16 is a schematic cross-sectional view showing a fifth step in themethod of manufacturing a solid-state image sensing device in Embodiment2 of the present invention.

FIG. 17 is a schematic cross-sectional view showing a sixth step in themethod of manufacturing a solid-state image sensing device in Embodiment2 of the present invention.

FIG. 18 is a schematic cross-sectional view showing a seventh step inthe method of manufacturing a solid-state image sensing device inEmbodiment 2 of the present invention.

FIG. 19 is a schematic cross-sectional view showing an eighth step inthe method of manufacturing a solid-state image sensing device inEmbodiment 2 of the present invention.

FIG. 20 is a schematic cross-sectional view showing a first step in amethod of manufacturing a solid-state image sensing device in Embodiment3 of the present invention.

FIG. 21 is a schematic cross-sectional view showing a second step in themethod of manufacturing a solid-state image sensing device in Embodiment3 of the present invention.

FIG. 22 is a schematic cross-sectional view showing a third step in themethod of manufacturing a solid-state image sensing device in Embodiment3 of the present invention.

FIG. 23 is a schematic cross-sectional view showing a fourth step in themethod of manufacturing a solid-state image sensing device in Embodiment3 of the present invention.

FIG. 24 is a schematic cross-sectional view showing a first step in amethod of manufacturing a solid-state image sensing device in Embodiment4 of the present invention.

FIG. 25 is a schematic cross-sectional view showing a second step in themethod of manufacturing a solid-state image sensing device in Embodiment4 of the present invention.

FIG. 26 is a schematic cross-sectional view showing a third step in themethod of manufacturing a solid-state image sensing device in Embodiment4 of the present invention.

FIG. 27 is a schematic cross-sectional view showing a fourth step in themethod of manufacturing a solid-state image sensing device in Embodiment4 of the present invention.

FIG. 28 is a schematic cross-sectional view showing a fifth step in themethod of manufacturing a solid-state image sensing device in Embodiment4 of the present invention.

FIG. 29 is a schematic cross-sectional view showing a first step in amethod of manufacturing a solid-state image sensing device in Embodiment5 of the present invention.

FIG. 30 is a schematic cross-sectional view showing a second step in themethod of manufacturing a solid-state image sensing device in Embodiment5 of the present invention.

FIG. 31 is a schematic cross-sectional view showing a third step in themethod of manufacturing a solid-state image sensing device in Embodiment5 of the present invention.

FIG. 32 is a schematic cross-sectional view showing a fourth step in themethod of manufacturing a solid-state image sensing device in Embodiment5 of the present invention.

FIG. 33 is a schematic cross-sectional view showing a method ofmanufacturing a solid-state image sensing device in Embodiment 6 of thepresent invention.

FIG. 34 is a schematic cross-sectional view showing a method ofmanufacturing a solid-state image sensing device in Embodiment 7 of thepresent invention.

FIG. 35 is a schematic cross-sectional view showing a method ofmanufacturing a solid-state image sensing device in Embodiment 8 of thepresent invention.

DESCRIPTION OF EMBODIMENTS

An embodiment of the present invention will be described hereinafterwith reference to the drawings.

Embodiment 1

A configuration of a solid-state image sensing device in the presentembodiment will initially be described.

Referring to FIGS. 1 and 2, a solid-state image sensing device in thepresent embodiment has a plurality of pixels PX. The plurality of pixelsPX include pixels for sensing images of light of colors different fromone another, and they have, for example, a pixel for sensing an image ofred light (an R pixel), a pixel for sensing an image of green light (a Gpixel), and a pixel for sensing an image of blue light (a B pixel).

Each of the plurality of pixels PX has, for example, a photodiode PDserving as a photoelectric conversion portion, a transistor for transferTTR, a transistor for resetting RTR, a transistor for amplification ATR,and a transistor for selection STR.

Photodiode PD has a p-type region and an n-type region together forminga pn junction. On a light incident side of this photodiode PD, anantireflection coating (not shown) is formed. This antireflectioncoating preferably has a structure different depending on a color oflight of which image is to be sensed (film thickness, film quality,etc.).

Each of transistor for transfer TTR, transistor for resetting RTR,transistor for amplification ATR, and transistor for selection STR is aninsulating gate field effect transistor, and implemented, for example,by an n-channel MOS transistor. Each of these transistors has a pair ofn-type source/drain regions formed in a surface of a semiconductorsubstrate and a gate electrode layer formed on a region of thesemiconductor substrate lying between the pair of source/drain regionswith a gate insulating film (a gate oxide film) being interposed. Inaddition, a sidewall (a sidewall insulating film: not shown) is formedto cover a sidewall of each gate electrode layer.

The p-type region of photodiode PD is connected, for example, to aground potential. The n-type region of photodiode PD and an n-typesource region of transistor for transfer TTR are electrically connectedto each other, and they are formed, for example, of a common n-typeregion. A gate electrode layer of transistor for transfer TTR iselectrically connected to a transfer signal line TS.

An n-type drain region of transistor for transfer TTR and an n-typesource region of transistor for resetting RTR are electrically connectedto each other. A gate electrode layer of transistor for resetting RTR iselectrically connected to a reset signal line RS.

An n-type drain region of transistor for resetting RTR and an n-typesource region of transistor for amplification ATR are electricallyconnected to each other, and formed, for example, of a common n-typeregion. A power supply line PWS is electrically connected to the n-typedrain region of transistor for resetting RTR and the n-type sourceregion of transistor for amplification ATR. A gate electrode layer oftransistor for amplification ATR is electrically connected to the n-typedrain region of transistor for transfer TTR and the n-type source regionof transistor for resetting RTR.

An n-type drain region of transistor for amplification ATR and an n-typesource region of transistor for selection STR are electrically connectedto each other, and formed, for example, of a common n-type region. Agate electrode layer of transistor for selection STR is electricallyconnected to a selection signal line SS. An n-type drain region oftransistor for selection STR is electrically connected to a verticalsignal line PS.

In addition, a peripheral circuit performing an operation is formed in aportion other than a pixel portion, and these peripheral circuits alsoinclude transistors and these transistors are also implemented byinsulating gate field effect transistors.

In connection with FIGS. 1 and 2, a configuration in which a group oftransistors constituted of one transistor for resetting RTR, onetransistor for amplification ATR and one transistor for selection STR isprovided for a set of diode portions constituted of one photodiode PDand one transistor for transfer TTR has been described, however, aconfiguration in which a group of transistors above is provided for aplurality of sets of diode portions above may be adopted. For example, agroup of transistors above may be shared by the plurality of sets ofdiode portions above connected in parallel.

A method of manufacturing a solid-state image sensing device in thepresent embodiment having a pixel 1 and a pixel 2 for sensing images oflight of colors different from each other and a MOS transistor will nowbe described with reference to FIGS. 3 to 11.

Pixel 1 shown in (A) in each of FIGS. 3 to 11 corresponds, for example,to a cross-section along the line IIIA-IIIA in FIG. 1, and pixel 2 shownin (B) in each of FIGS. 3 to 11 corresponds, for example, to across-section along the line IIIB-IIIB in FIG. 1. In addition, the MOStransistor shown in (C) in each of FIGS. 3 to 11 corresponds, forexample, to a cross-section along the line IIIC-IIIC in FIG. 1.

Referring to FIG. 3, for example, an element isolation structure (notshown) or a p-type well region PW are formed in a surface of an n-typesemiconductor substrate SUB composed of silicon. Thereafter, byoxidizing the surface of semiconductor substrate SUB, for example, asilicon oxide film GI is formed on the surface of semiconductorsubstrate SUB. On this silicon oxide film GI, for example, apolycrystalline silicon film GE and a silicon oxide film CI aresuccessively formed by stacking.

Thereafter, using normal photolithography technique and etchingtechnique, silicon oxide film CI, polycrystalline silicon film GE andsilicon oxide film GI are patterned. Thus, a stack pattern constitutedof a gate insulating film GI formed, for example, from a silicon oxidefilm, gate electrode layer GE formed, for example, from apolycrystalline silicon film, and a cap insulating film CI formed, forexample, from a silicon oxide film is formed on each of pixel 1, pixel2, and the MOS transistor.

Referring to FIG. 4, using the normal photolithography technique, aphotoresist pattern PR1 is formed on the surface of semiconductorsubstrate SUB. This photoresist pattern PR1 is formed to provideopenings on portions where photodiodes for pixel 1 and pixel 2 are to beformed respectively and to cover the MOS transistor. Using thisphotoresist pattern PR1 as a mask, ions, for example, of arsenic (As),phosphorus (P), or the like are implanted into the surface ofsemiconductor substrate SUB. As a result of this ion implantation, ann-type region NR1 is formed in the surface of semiconductor substrateSUB, and photodiode PD is formed by this n-type region NR1 and p-typewell region PW, in a portion indicated with a region S. Thereafter,photoresist pattern PR1 is removed, for example, through ashing or thelike.

Referring to FIG. 5, using the normal photolithography technique, aphotoresist pattern PR1A is formed on the surface of semiconductorsubstrate SUB. This photoresist pattern PR1A is formed to provideopenings on respective photodiodes PD of pixel 1 and pixel 2 and tocover the MOS transistor. Using photoresist pattern PR1A as a mask,ions, for example, of boron (B) or the like are implanted into thesurface of semiconductor substrate SUB. As a result of this ionimplantation, a p⁺region PR is formed in the surface of semiconductorsubstrate SUB. This p⁺ region PR is formed to prevent electrons frombeing trapped by a trap potential present at the surface ofsemiconductor substrate SUB and to lower noise. Formation of this p⁺region PR is not essential and it may not be provided. Thereafter,photoresist pattern PR1A is removed, for example, through ashing or thelike.

Referring to FIG. 6, using the normal photolithography technique, aphotoresist pattern PR2 is formed on the surface of semiconductorsubstrate SUB. This photoresist pattern PR2 is formed to provide anopening on a region to serve as a source/drain of the MOS transistor andto cover respective photodiodes PD of pixel 1 and pixel 2. Using thisphotoresist pattern PR2 as a mask, ions, for example, of As, P, or thelike are implanted into the surface of semiconductor substrate SUB, withsuch methodologies as oblique implantation, rotating implantation, orthe like. As a result of this ion implantation, an n-type LDD (LightlyDoped Drain) region NR2 is formed in the surface of semiconductorsubstrate SUB.

This LDD region NR2 may be formed in both of the source region and thedrain region, however, it should be formed at least only in the drainregion. Thereafter, photoresist pattern PR2 is removed, for example,through ashing or the like.

Referring to FIG. 7, a stack film SL is formed on the entire surface ofsemiconductor substrate SUB. This stack film SL is a film serving asboth of a lower film of an antireflection coating (a lowerantireflection coating) and a sidewall by being patterned in asubsequent step. This stack film SL has such a construction that a lowerinsulating film SL1 formed, for example, from a silicon nitride film andan upper insulating film SL2 formed, for example, from a silicon oxidefilm are stacked. A thickness of this stack film SL as a whole is set toa thickness corresponding to a width W of a sidewall formed in asubsequent step (FIG. 11). Therefore, in a case where a sidewall haswidth W, for example, from 150 to 300 nm, lower insulating film SL1 hasa thickness, for example, from 50 to 100 nm and upper insulating filmSL2 has a thickness, for example, from 100 to 200 nm.

Referring to FIG. 8, using the normal photolithography technique, aphotoresist pattern PR3 is formed on the surface of semiconductorsubstrate SUB. This photoresist pattern PR3 is formed to coverrespective photodiodes PD of pixel 1 and pixel 2 and to provide anopening on the MOS transistor. Using this photoresist pattern PR3 as amask, stack film SL is anisotropically etched. Etching is performed atleast until the surface of semiconductor substrate SUB and a surface ofcap insulating film CI are exposed.

As a result of this etching, stack film SL remains to cover a sidewallof gate electrode layer GE to serve as sidewall SW. In addition, stackfilms SL left on respective photodiodes PD of pixel 1 and pixel 2 serveas the lower antireflection coatings. Namely, as a result of etching ofstack film SL, sidewall SW and lower antireflection coating SL aresimultaneously formed in the same manufacturing step. Thereafter,photoresist pattern PR3 is removed, for example, through ashing or thelike.

Referring to FIG. 9, using the normal photolithography technique, aphotoresist pattern PR4 is formed on the surface of semiconductorsubstrate SUB. This photoresist pattern PR4 is formed to coverrespective photodiodes PD of pixel 1 and pixel 2 and to provide anopening on the MOS transistor. Using this photoresist pattern PR4, gateelectrode layer GE, sidewall SW, and the like as a mask, ions, forexample, of As, P, or the like are implanted into the surface ofsemiconductor substrate SUB. It is noted that, prior to ionimplantation, an insulating film OX formed, for example, from a siliconoxide film is formed on the exposed surface of semiconductor substrateSUB.

As a result of this ion implantation, an n-type region NR3 serving as asource/drain region is formed in the surface of semiconductor substrateSUB. Thus, the MOS transistor having LDD region NR2, source/drain regionNR3, and gate electrode layer GE is formed. Thereafter, photoresistpattern PR4 is removed, for example, through ashing or the like.

Referring to FIG. 10, using the normal photolithography technique, aphotoresist pattern PR5 is formed on the surface of semiconductorsubstrate SUB. This photoresist pattern PR5 is formed to coverphotodiode PD of pixel 1 and the MOS transistor and to provide anopening on photodiode PD of pixel 2. Using this photoresist pattern PR5as a mask, lower antireflection coating SL of pixel 2 is anisotropicallyetched. Thus, a thickness of lower antireflection coating SL of pixel 2is controlled to be smaller than a thickness of lower antireflectioncoating SL of pixel 1.

Etching above is performed, for example, to remove only a part of athickness of upper insulating film SL2. It is noted that etching may beperformed to remove the whole thickness of upper insulating film SL2 orto remove only a part of a thickness of lower insulating film SL1 afterremoving the whole thickness of upper insulating film SL2. Thereafter,photoresist pattern PR5 is removed, for example, through ashing or thelike.

Referring to FIG. 11, an insulating film AL implementing an upper filmof the antireflection coating (an upper antireflection coating) isformed on the entire surface of semiconductor substrate SUB. Thisinsulating film AL is formed, for example, from a silicon nitride filmhaving a thickness of 30 nm Lower antireflection coating SL andinsulating film (upper antireflection coating) AL form antireflectioncoating (first film) AR on photodiode PD of each of pixel 1 and pixel 2.

A portion in insulating film AL above, which is not necessary for anoperation of the transistor, such as a contact portion of source/drainregion NR3, a contact portion of gate electrode layer GE, and the like,is removed through the normal photolithography technique and etchingtechnique.

Through the steps above, the solid-state image sensing device in thepresent embodiment is formed.

A construction of antireflection coating AR, sidewall SW, and the likein the solid-state image sensing device in the present embodiment formedwith the manufacturing method above will now be described.

Referring to FIG. 11, in the solid-state image sensing device in thepresent embodiment, colors of light of which images are sensed by pixel1 and pixel 2 are different from each other. In both of pixel 1 andpixel 2, a pn junction portion between n-type region NR1 and p-type wellregion PW in region S in semiconductor substrate SUB is a portionfunctioning as photodiode PD. Antireflection coating AR is formed oneach of these photodiodes PD.

In each of pixel 1 and pixel 2, antireflection coating AR has athree-layered structure in which lower insulating film SL1, upperinsulating film SL2, and upper antireflection coating AL are stacked.Antireflection coating AR of pixel 1 and antireflection coating AR ofpixel 2 have structures different from each other (film thickness, filmquality, etc.).

In the present embodiment, a thickness T1 of antireflection coating ARof pixel 1 is greater than a thickness T2 of antireflection coating ARof pixel 2. Specifically, pixel 1 and pixel 2 are equal to each other inthickness of lower insulating film SL1 and pixel 1 and pixel 2 are alsoequal to each other in thickness of upper antireflection coating AL,however, upper insulating film SL2 of pixel 1 is thicker than upperinsulating film SL2 of pixel 2.

So long as antireflection coating AR of pixel 1 and antireflectioncoating AR of pixel 2 have structures different from each other (filmthickness, film quality, etc.), the structure is not limited to thestructure above.

A thickness of antireflection coating AR in at least one pixel isgreater than a width of sidewall SW. In the present embodiment,thickness T1 of antireflection coating AR of pixel 1 is greater thanwidth W of sidewall SW of the MOS transistor. In addition, thickness T2of antireflection coating AR of pixel 2 may be greater or smaller thanwidth W of sidewall SW of the MOS transistor.

Since lower antireflection coating SL is formed simultaneously withsidewall SW by anisotropically etching stack films SL1 and SL2, it hasan end surface ARE having a pattern produced in anisotropic etching.Since upper antireflection coating AL is formed on lower antireflectioncoating SL after anisotropic etching, it is formed to cover end surfaceARE of lower antireflection coating SL.

The MOS transistor has a pair of source/drain regions NR3 formed at adistance from each other in the surface of semiconductor substrate SUB,LDD region NR2 formed around each of the pair of source/drain regionsNR3, and gate electrode layer GE formed on the region lying between thepair of source/drain regions NR3 with gate insulating film GI beinginterposed.

Sidewall SW is formed to cover the sidewall of gate electrode layer GE.This sidewall SW has such a construction that two layers of lowerinsulating film SL1 and upper insulating film SL2 are stacked. Lowerinsulating film SL1 has an L shape in the cross-sectional view in FIG.11, and upper insulating film SL2 is formed on lower insulating filmSL1. Insulating film AL is formed to cover at least the sidewall ofsidewall SW.

A function and effect of the solid-state image sensing device in thepresent embodiment will now be described.

According to the present embodiment, a thickness of stack film SLdetermines width W of sidewall SW and a thickness of lowerantireflection coating SL and upper antireflection coating AL determinesthickness T1, T2 of antireflection coating AR. Therefore, width W ofsidewall SW and thickness T1, T2 of antireflection coating AR canindependently be controlled. Thus, even though width W of sidewall SWbecomes smaller under the scaling law, thickness T1 of antireflectioncoating AR can be equal to or greater than width W of sidewall SW andadaptation to reduction in size is facilitated.

In addition, after sidewall SW and lower antireflection coating SL areformed from stack films SL1 and SL2, upper antireflection coating AL isformed on lower antireflection coating SL. Therefore, restrictions inconnection with antireflection coating AR are lessened as compared witha case where antireflection coating AR and sidewall SW are formed in thesame step.

Further, after sidewall SW and lower antireflection coating SL areformed from stack films SL1 and SL2, upper antireflection coating AL isformed and at least any of lower antireflection coating SL and upperantireflection coating AL is removed. Therefore, antireflection coatingsAR can be fabricated to different thicknesses in respective ones of theplurality of pixels PX without affecting width W of sidewall SW.Therefore, an antireflection effect can be optimized for each pixel PX.

Embodiment 2

In Embodiment 1 above, a method of etching lower antireflection coatingSL for varying a thickness of antireflection coating AR of each of pixel1 and pixel 2 has been described, however, a thickness of antireflectioncoating AR of each of pixel 1 and pixel 2 may be varied by etching upperantireflection coating AL.

A method of varying a thickness of antireflection coating AR of each ofpixel 1 and pixel 2 by etching the upper antireflection coating will bedescribed hereinafter as the present embodiment mainly with reference toFIGS. 12 to 19.

In the present embodiment, a method of manufacturing both of pixel 1 andpixel 2 initially goes through the steps the same as those for pixels 1and 2 shown in FIGS. 3(B) to 11(B). In addition, a method ofmanufacturing a MOS transistor in the present embodiment initially goesthrough the steps the same as those for the MOS transistor shown inFIGS. 3(C) to 11(C).

Thereafter, referring to FIG. 12, using the normal photolithographytechnique, a photoresist pattern PR6 is formed on the surface ofsemiconductor substrate SUB. This photoresist pattern PR6 is formed tocover photodiode PD of pixel 1 and to provide openings on photodiode PDof pixel 2 and the MOS transistor respectively. Using this photoresistpattern PR6 as a mask, upper antireflection coating AL of pixel 2 isanisotropically etched. Thus, a thickness of antireflection coating ARof pixel 2 is controlled to be smaller than a thickness ofantireflection coating AR of pixel 1. Though a case where an end ofphotoresist pattern PR6 is located on gate electrode GE in pixel 1 isshown in FIG. 12(A), the gate is effectively located high in this case.In general, in an image sensing element, a thinner film between contactlayers is desirable in order to prevent vignetting, and hence the gateis also preferably located low. Therefore, the end of photoresistpattern PR6 may not be located on the gate so that the antireflectioncoating on the gate is etched. This is also the case with pixel 2 inFIG. 12(B), and in this case, it is not necessary to provide photoresistpattern PR6.

Etching above is performed, for example, to remove the whole thicknessof upper antireflection coating AL. It is noted that etching may beperformed to remove only a part of the thickness of upper antireflectioncoating AL or to remove only a part of a thickness of lowerantireflection coating SL after removing the whole thickness of upperantireflection coating AL.

In a case where the whole thickness of upper antireflection coating ALis removed in this etching, upper antireflection coating AL remains onlyon the sidewall of sidewall SW except for a portion covered withphotoresist pattern PR6.

Referring to FIG. 13, thereafter, photoresist pattern PR6 is removed,for example, through ashing or the like.

Referring to FIG. 14, an interlayer insulating film II is formed on theentire surface of semiconductor substrate SUB so as to cover photodiodePD and the MOS transistor. This interlayer insulating film II is formedfrom a silicon oxide film made, for example, of TEOS as a sourcematerial, and it has a flat upper surface by being subjected to suchplanarization processing as CMP (Chemical Mechanical Polishing).

Referring to FIG. 15, using the normal photolithography technique andetching technique, a contact hole CH passing through interlayerinsulating film II and insulating film OX to reach source/drain regionNR3 is formed in interlayer insulating film IL Referring to FIG. 16, acontact plug PL composed, for example, of tungsten is formed to burythis contact hole CH.

Referring to FIG. 17, an interconnection layer IL composed, for example,of aluminum, copper or the like is formed on interlayer insulating filmII to electrically be connected to source/drain region NR3 throughcontact plug PL.

Referring to FIG. 18, an interlayer insulating film II2 is formed oninterlayer insulating film II to cover interconnection layer IL. Ahigh-refraction-index film HRL for lens is formed on this interlayerinsulating film II2. Thereafter, high-refraction-index film HRL isworked.

Referring to FIG. 19, as high-refraction-index film HRL above is worked,a lens LE is formed from high-refraction-index film HRL. Thus, thesolid-state image sensing device in the present embodiment ismanufactured.

A construction of the antireflection coating, the sidewall, and the likein the solid-state image sensing device in the present embodiment formedwith the manufacturing method above will now be described.

Referring to FIG. 19, in the present embodiment, antireflection coatingAR of pixel 1 is greater in thickness than antireflection coating AR ofpixel 2. Specifically, antireflection coating AR of pixel 1 has athree-layered structure in which lower insulating film SL1, upperinsulating film SL2 and upper antireflection coating AL are stacked.Meanwhile, antireflection coating AR of pixel 2 has a two-layeredstructure in which lower insulating film SL1 and upper insulating filmSL2 are stacked.

It is noted that antireflection coating AR of pixel 2 may have asingle-layered structure of lower insulating film SL1, or it may have athree-layered structure in which lower insulating film SL1, upperinsulating film SL2 and upper antireflection coating AL are stacked andupper antireflection coating AL is smaller in thickness than upperantireflection coating AL of pixel 1.

A thickness of antireflection coating AR in at least one pixel isgreater than a width of sidewall SW. In the present embodiment, thethickness of antireflection coating AR of pixel 1 is greater than widthW of sidewall SW of the MOS transistor. In addition, thickness T2 ofantireflection coating AR of pixel 2 may be greater or smaller thanwidth W of sidewall SW of the MOS transistor.

In addition, interlayer insulating film II formed, for example, from asilicon oxide film is formed on the surface of semiconductor substrateSUB so as to cover photodiode PD and the MOS transistor. Contact hole CHreaching source/drain region NR3 is formed in interlayer insulating filmII and insulating film OX. Contact plug PL composed, for example, oftungsten is formed to bury contact hole CH.

Interconnection layer IL composed, for example, of aluminum, copper orthe like is formed on interlayer insulating film II to electrically beconnected to source/drain region NR3 through contact plug PL. Interlayerinsulating film II2 formed, for example, from a silicon oxide film isformed on interlayer insulating film II so as to cover interconnectionlayer IL. Lens LE formed from high-refraction-index film HRL is formedon this interlayer insulating film II2. This lens LE serves to condenselight for irradiation of photodiode PD.

Since the construction is otherwise substantially the same as inEmbodiment 1 shown in FIG. 11, the same elements have the same referencecharacters allotted and description thereof will not be provided.

The construction in Embodiment 1 shown in FIG. 11 also has interlayerinsulating films II, II2, contact hole CH, contact plug PL,interconnection layer IL, and lens LE, as in the construction in thepresent embodiment shown in FIG. 19.

According to the present embodiment, since additional upperantireflection coating AL is formed after the sidewall is formed in aplurality of pixels, a function and effect the same as in Embodiment 1can be obtained.

In addition, according to the present embodiment, not only the thicknessof lower antireflection coating SL but also the thickness of upperantireflection coating AL can be controlled in pixel 2, and henceoptimization of the antireflection effect for each pixel is furtherfacilitated.

Embodiment 3

In the present embodiment, a solid-state image sensing device having anR pixel (a first pixel), a G pixel (a second pixel), and a B pixel (athird pixel) as a plurality of pixels as well as a MOS transistor willbe described. Initially, a method of manufacturing the solid-state imagesensing device in the present embodiment will be described mainly withreference to FIGS. 20 to 23.

The R pixel shown in (A) in each of FIGS. 20 to 23 corresponds, forexample, to the cross-section along the line in FIG. 1, and the G pixelshown in (B) in each of FIGS. 20 to 23 corresponds, for example, to thecross-section along the line IIIB-IIIB in FIG. 1. In addition, the Bpixel shown in (C) in each of FIGS. 20 to 23 corresponds, for example,to a cross-section along the line XXC-XXC in FIG. 1, and the MOStransistor shown in (D) in each of FIGS. 20 to 23 corresponds, forexample, to the cross-section along the line IIIC-IIIC in FIG. 1.

A method of manufacturing the R pixel in the present embodimentinitially goes through the steps the same as those for pixel 1 shown inFIGS. 3(A) to 10(A). In addition, a method of manufacturing both of theG pixel and the B pixel goes through the steps the same as those forpixel 2 shown in FIGS. 3(B) to 10(B). Moreover, a method ofmanufacturing a MOS transistor in the present embodiment goes throughthe steps the same as those for the MOS transistor shown in FIGS. 3(C)to 10(C). FIG. 20 shows a state after the steps so far are completed.

Table 1 below shows a thickness of lower insulating film SL1 and athickness of upper insulating film SL2 formed in each of the R pixel,the G pixel, and the B pixel in the step in FIG. 7 above. In Table 1,lower insulating film SL1 is denoted, for example, as “lower layer SiN”as a silicon nitride film, and upper insulating film SL2 is denoted, forexample, as “intermediate layer TEOS” as a silicon oxide film formed ofTEOS (Tetra Ethyl Ortho Silicate) as a source material. Further, “upperlayer SiN” in Table 1 refers to upper antireflection coating AL formed,for example, from a silicon nitride film, however, it has not yet beenformed in the step in FIG. 7 and therefore a thickness thereof is 0 nm.

In the step in FIG. 7, the sum of thicknesses of lower layer SiN andintermediate layer TEOS shown in Table 1 is set to be equal to the widthof sidewall SW.

TABLE 1 Structure R G B Upper Layer 0 nm 0 nm 0 nm SiN Intermediate 0 to300 nm 0 to 300 nm 0 to 300 nm Layer TEOS Lower Layer 0 to 300 nm 0 to300 nm 0 to 300 nm SiN

In addition, Table 2 below shows thicknesses of “lower layer SiN,”“intermediate layer TEOS” and “upper layer SiN” formed in each of the Rpixel, the G pixel, and the B pixel after lower antireflection coatingSL in each of the G pixel and the B pixel is etched in the step in FIG.10 above.

TABLE 2 Structure R G B Upper Layer 0 nm 0 nm 0 nm SiN Intermediate 0 to300 nm 0 to 250 nm 0 to 250 nm Layer TEOS Lower Layer 0 to 300 nm 0 to300 nm 0 to 300 nm SiN

Referring to FIG. 21, after photoresist pattern PR5 (FIG. 20) isremoved, for example, through ashing or the like, insulating film ALimplementing the upper antireflection coating is formed on the entiresurface of semiconductor substrate SUB. This insulating film AL isformed, for example, from a silicon nitride film having a thickness from0 to 100 nm Table 3 below shows thicknesses of “lower layer SiN,”“intermediate layer TEOS” and “upper layer SiN” formed in each of the Rpixel, the G pixel, and the B pixel in this state.

TABLE 3 Structure R G B Upper Layer 0 to 100 nm 0 to 100 nm 0 to 100 nmSiN Intermediate 0 to 300 nm 0 to 250 nm 0 to 250 nm Layer TEOS LowerLayer 0 to 300 nm 0 to 300 nm 0 to 300 nm SiN

Referring to FIG. 22, using the normal photolithography technique,photoresist pattern PR6 is formed on the surface of semiconductorsubstrate SUB. This photoresist pattern PR6 is formed to coverrespective photodiodes PD of the R pixel and the G pixel and to provideopenings on photodiode PD of the B pixel and the MOS transistorrespectively. Using this photoresist pattern PR6 as a mask, upperantireflection coating AL of the B pixel is anisotropically etched.Upper antireflection coating AL is thus removed in the B pixel and itsthickness is decreased. This etching may be performed to allow a part ofa thickness of upper antireflection coating AL in the B pixel to remainor may be performed to decrease the thickness of lower antireflectioncoating SL after upper antireflection coating AL is completely removed.

Though a case where an end of photoresist pattern PR6 is located on gateelectrode GE in each of the R pixel and the G pixel in FIGS. 22(A) to22(B) is shown, the gate is effectively located high in this case. Ingeneral, in an image sensing element, a thinner film between contactlayers is desirable in order to prevent vignetting, and hence the gateis also preferably located low. Therefore, the end of photoresistpattern PR6 may not be located on the gate so that the antireflectioncoating on the gate is etched. This is also the case with the B pixel inFIG. 22(C), and in this case, it is not necessary to provide photoresistpattern PR6.

Table 4 below shows thicknesses of “lower layer SiN,” “intermediatelayer TEOS” and “upper layer SiN” formed in each of the R pixel, the Gpixel, and the B pixel in this state.

TABLE 4 Structure R G B Upper Layer 0 to 100 nm 0 to 100 nm  0 to 50 nmSiN Intermediate 0 to 300 nm 0 to 250 nm 0 to 250 nm Layer TEOS LowerLayer 0 to 300 nm 0 to 300 nm 0 to 300 nm SiN *SW = 0 to 600 nm

Thereafter, as photoresist pattern PR6 (FIG. 22) is removed, forexample, through ashing or the like, the construction shown in FIG. 23is obtained. Thereafter, the solid-state image sensing device in thepresent embodiment is formed by going through the steps substantiallythe same as in Embodiment 2 shown in FIGS. 14 to 19.

According to the present embodiment, since additional upperantireflection coating AL is formed after sidewall SW is formed in theplurality of pixels PX, a function and effect the same as in Embodiment1 is obtained. In addition, sidewall SW common to all MOS transistorscan be formed and antireflection coating AR optimized for each of the Rpixel, the G pixel and the B pixel can be realized in a relativelysimplified process.

It is noted that, since a wavelength of each of red light, green lightand blue light satisfies relation of red light>green light>blue light,optimal values for the thicknesses of the antireflection coatings formedin the R pixel, the G pixel and the B pixel respectively are alsoconsidered to satisfy relation of red light>green light>blue light. Inthe present embodiment and the following Embodiment 4, theantireflection coatings are formed to satisfy the relation in thicknessabove.

It is noted that, in a case where relation in thickness among theantireflection coatings of respective pixels different from above ispreferred depending on an effect of interference or the like, anantireflection coating satisfying such relation is formed.

Embodiment 4

In the present embodiment, a solid-state image sensing device having anR pixel (a first pixel), a G pixel (a second pixel), and a B pixel (athird pixel) as a plurality of pixels as well as a MOS transistor as inEmbodiment 3 will be described. Initially, a method of manufacturing thesolid-state image sensing device in the present embodiment will bedescribed mainly with reference to FIGS. 24 to 28.

The R pixel shown in (A) in each of FIGS. 24 to 28 corresponds, forexample, to the cross-section along the line IIIA-IIIA in FIG. 1, andthe G pixel shown in (B) in each of FIGS. 24 to 28 corresponds, forexample, to the cross-section along the line IIIB-IIIB in FIG. 1. Inaddition, the B pixel shown in (C) in each of FIGS. 24 to 28corresponds, for example, to the cross-section along the line XXC-XXC inFIG. 1, and the MOS transistor shown in (D) in each of FIGS. 24 to 28corresponds, for example, to the cross-section along the line IIIC-IIICin FIG. 1.

A method of manufacturing the R pixel, the G pixel, and the B pixel aswell as the MOS transistor in the present embodiment initially goesthrough the steps the same as shown in FIGS. 3 to 9. FIG. 24 shows astate after the steps so far are completed.

Table 5 below shows a thickness of lower insulating film SL1 and athickness of upper insulating film SL2 formed in each of the R pixel,the G pixel, and the B pixel in the step in FIG. 7 above. It is notedthat denotation as “lower layer SiN” in Table 5 is the same as thedenotation of “lower layer SiN” in Tables 1 to 4. A thickness of“intermediate layer TEOS” in Table 5 refers to a total thickness ofupper insulating film SL2 of lower antireflection coating SL and a lowerinsulating film AL1 of upper antireflection coating AL. In addition, athickness of “upper layer SiN” in Table 5 refers to a thickness of anupper insulating film AL2 of upper antireflection coating AL.

Further, since upper antireflection coating AL has not yet been formedin the step in FIG. 7, the thickness of “intermediate layer TEOS” inTable 5 means only the thickness of upper insulating film SL2 of lowerantireflection coating SL and a thickness of “upper layer SiN” is 0 nm.

TABLE 5 Structure R G B Upper Layer 0 nm 0 nm 0 nm SiN Intermediate 0 to100 nm 0 to 100 nm 0 to 100 nm Layer TEOS Lower Layer 0 to 300 nm 0 to300 nm 0 to 300 nm SiN

Referring to FIG. 25, after photoresist pattern PR4 (FIG. 24) isremoved, for example, through ashing or the like, using the normalphotolithography technique, photoresist pattern PR5 is formed on thesurface of semiconductor substrate SUB. This photoresist pattern PR5 isformed to cover photodiode PD of the R pixel and the MOS transistor andto provide openings on respective photodiodes PD of the G pixel and theB pixel. Using this photoresist pattern PR5 as a mask, lowerantireflection coatings SL of the G pixel and the B pixel respectivelyare anisotropically etched. A part of the thickness of lowerantireflection coating SL is thus removed in the G pixel and the B pixeland its thickness is decreased. Thereafter, photoresist pattern PR5 isremoved, for example, through ashing or the like.

Table 6 below shows thicknesses of “lower layer SiN,” “intermediatelayer TEOS” and “upper layer SiN” formed in each of the R pixel, the Gpixel, and the B pixel in this state.

TABLE 6 Structure R G B Upper Layer 0 nm 0 nm 0 nm SiN Intermediate 0 to100 nm 0 to 50 nm 0 to 50 nm Layer TEOS Lower Layer 0 to 300 nm 0 to 300nm 0 to 300 nm SiN

Referring to FIG. 26, insulating film AL implementing the upperantireflection coating is formed on the entire surface of semiconductorsubstrate SUB. This insulating film AL is formed from a stack film oflower insulating film AL1 and upper insulating film AL2. Lowerinsulating film AL1 is, for example, a silicon oxide film having athickness from 0 to 200 nm, and upper insulating film AL2 is, forexample, a silicon nitride film having a thickness from 0 to 100 nmTable 7 below shows thicknesses of “lower layer SiN,” “intermediatelayer TEOS” and “upper layer SiN” formed in each of the R pixel, the Gpixel, and the B pixel in this state.

TABLE 7 Structure R G B Upper Layer 0 to 100 nm 0 to 100 nm 0 to 100 nmSiN Intermediate 0 to 300 nm 0 to 250 nm 0 to 250 nm Layer TEOS LowerLayer 0 to 300 nm 0 to 300 nm 0 to 300 nm SiN

Referring to FIG. 27, using the normal photolithography technique,photoresist pattern PR6 is formed on the surface of semiconductorsubstrate SUB. This photoresist pattern PR6 is formed to coverrespective photodiodes PD of the R pixel and the G pixel and to provideopenings on photodiode PD of the B pixel and the MOS transistorrespectively. Using this photoresist pattern PR6 as a mask, upperantireflection coating AL of the B pixel is anisotropically etched.Upper insulating film AL2 is thus removed in the B pixel and itsthickness is decreased. This etching may be performed to allow a part ofa thickness of upper insulating film AL2 in the B pixel to remain or maybe performed to decrease the thickness of lower insulating film AL1after upper insulating film AL2 is completely removed.

Though a case where an end of photoresist pattern PR6 is located on gateelectrode GE in each of the R pixel and the G pixel in FIGS. 27(A) to27(B) is shown, the gate is effectively located high in this case. Ingeneral, in an image sensing element, a thinner film between contactlayers is desirable in order to prevent vignetting, and hence the gateis also preferably located low. Therefore, the end of photoresistpattern PR6 may not be located on the gate so that the antireflectioncoating on the gate is etched. This is also the case with the B pixel inFIG. 27(C), and in this case, it is not necessary to provide photoresistpattern PR6.

Table 8 below shows thicknesses of “lower layer SiN,” “intermediatelayer TEOS” and “upper layer SiN” formed in each of the R pixel, the Gpixel, and the B pixel in this state.

TABLE 8 Structure R G B Upper Layer 0 to 100 nm 0 to 100 nm  0 to 50 nmSiN Intermediate 0 to 300 nm 0 to 250 nm 0 to 250 nm Layer TEOS LowerLayer 0 to 300 nm 0 to 300 nm 0 to 300 nm SiN *SW = 0 to 400 nm

Thereafter, as photoresist pattern PR6 (FIG. 27) is removed, forexample, through ashing or the like, the construction shown in FIG. 28is obtained. Thereafter, the solid-state image sensing device in thepresent embodiment is formed by going through the steps substantiallythe same as in Embodiment 2 shown in FIGS. 14 to 19.

According to the present embodiment, since additional upperantireflection coating AL is formed after sidewall SW is formed in theplurality of pixels PX, a function and effect the same as in Embodiment1 is obtained. In addition, sidewall SW common to all MOS transistorscan be formed and antireflection coating AR optimized for each of the Rpixel, the G pixel and the B pixel can be realized in a relativelysimplified process.

Embodiment 5

In the present embodiment, a method of forming a borderless active layercontact by using insulating film AL implementing the upperantireflection coating as an etching stopper film will be describedmainly with reference to FIGS. 29 to 32.

The method of forming a borderless active layer contact in the presentembodiment goes, for example, through the steps shown in FIGS. 3 to 11.Thereafter, referring to FIG. 29, using the normal photolithographytechnique, photoresist pattern PR6 is formed on the surface ofsemiconductor substrate SUB. This photoresist pattern PR6 is formed tocover photodiode PD of pixel 1 and the MOS transistor and to provide anopening on photodiode PD of pixel 2. Using this photoresist pattern PR6as a mask, upper antireflection coating AL of pixel 2 is anisotropicallyetched. Thus, a thickness of antireflection coating AR of pixel 2 iscontrolled to be smaller than a thickness of antireflection coating ARof pixel 1. Here, insulating film AL on the MOS transistor (for example,a silicon nitride film) remains. Thereafter, photoresist pattern PR6 isremoved, for example, through ashing or the like.

Referring to FIG. 30, interlayer insulating film II is formed to coverphotodiodes PD and the MOS transistor. This interlayer insulating filmII is formed from a silicon oxide film made, for example, of TEOS as asource material, and it has a flat upper surface by being subjected tosuch planarization processing as CMP.

Referring to FIG. 31, using the normal photolithography technique andetching technique, interlayer insulating film II is anisotropicallyetched until the surface of insulating film AL is exposed. For etchingof this interlayer insulating film II, such an etching condition asavoiding as much as possible removal of insulating film AL by etching isselected. Through the etching above, contact hole CH exposing thesurface of insulating film AL is formed in interlayer insulating filmII.

Referring to FIG. 32, insulating film AL exposed through contact hole CHis etched to expose underlying insulating film OX. Etching performed onthis insulating film AL is performed under an etching conditiondifferent from that in etching for removing the interlayer insulatingfilm above. Thereafter, by further removing exposed insulating film OXby etching, source/drain region NR3 is exposed through contact hole CH.Thus, contact hole CH passing through interlayer insulating film II,insulating film AL and insulating film OX to reach source/drain regionNR3 is formed.

In the present embodiment, contact hole CH is opened in interlayerinsulating film II while insulating film AL remains to cover an upperportion and a side portion of sidewall SW. This insulating film AL asstopper is formed, for example, from a silicon nitride film, and hence ahigh selective etching ratio with respect to interlayer insulating filmII formed from a silicon oxide film can be set. Therefore, duringetching for forming contact hole CH, this insulating film AL as stopperfunctions as an etching stopper film.

In addition, in removing insulating film AL exposed through contact holeCH, since insulating film AL is smaller in thickness than interlayerinsulating film II, partial removal of sidewall SW or the like underinsulating film AL can be suppressed.

Thus, even when a position of opening contact hole CH may be displaceddue to misregistration of a mask or the like, contact hole CH reachingsource/drain region NR3 can be formed while suppressing partial removalof sidewall SW.

According to the present embodiment, since insulating film AL as stopperserves as an etching stopper, partial removal of sidewall SW can besuppressed and adaptation to reduction in size is facilitated.

Embodiment 6

Though a case where stack film SL has a two-layered structure has beendescribed in Embodiments 1 to 5 above, stack film SL may have athree-layered structure as in the present embodiment shown in FIG. 33.This stack film SL has a construction in which lower insulating filmSL1, an intermediate insulating film SL2, and an upper insulating filmSL3 are stacked. Lower insulating film SL1 is formed, for example, froma silicon nitride film, intermediate insulating film SL2 is formed, forexample, from a silicon oxide film made of TEOS as a source material,and upper insulating film SL3 is formed, for example, from a siliconnitride film. Alternatively, stack film SL may have a stack structurehaving four or more layers.

Embodiment 7

Though a case where insulating film AL implementing the upperantireflection coating has a single-layered structure has been describedin Embodiments 1 to 3 and 5 above, insulating film AL implementing theupper antireflection coating may have a two-layered structure as in thepresent embodiment shown in FIG. 34. This insulating film AL has lowerinsulating film AL1 and upper insulating film AL2. Lower insulating filmAL1 is formed, for example, from a silicon oxide film, and upperinsulating film AL2 is formed, for example, from a silicon nitride film.Alternatively, insulating film AL in Embodiments 1 to 5 may have a stackstructure having three or more layers.

Embodiment 8

Insulating film AL implementing the upper antireflection coating inEmbodiments 1 to 5 above may be formed such that it is not deposited onsemiconductor substrate SUB and gate electrode layer GE throughselective growth as shown in FIG. 35. According to this method, sincethe step of etching the upper antireflection coating can be omitted,damage caused by the etching step to the MOS transistor can bemitigated.

Though the MOS transistor has been described in Embodiments 1 to 8above, this transistor may be a MIS (Metal Insulator Semiconductor)transistor of which gate insulating film is formed from an insulatingfilm other than a silicon oxide film, and it should only be aninsulating gate field effect transistor. In addition, though then-channel MOS transistor has been described, the transistor may be ap-channel MOS transistor.

Further, semiconductor substrate SUB and a well may have anyconductivity type. Though photodiode PD has been described, the presentinvention is applicable to any device capable of photoelectricconversion.

It should be understood that the embodiments disclosed herein areillustrative and non-restrictive in every respect. The scope of thepresent invention is defined by the terms of the claims, rather than thedescription above, and is intended to include any modifications withinthe scope and meaning equivalent to the terms of the claims.

REFERENCE SIGNS LIST

AL insulating film (upper antireflection coating); AL1 lower insulatingfilm; AL2 upper insulating film; AR antireflection coating; ARS1, ARS2end surface; ATR transistor for amplification; CH contact hole; CI capinsulating film; GE gate electrode layer; GI gate insulating film; HRLhigh-refraction-index film HRL; II, II2 interlayer insulating film; ILinterconnection layer; LE lens; NR1, NR3 n-type region; NR2 n-type LDDregion; PD photodiode; PL contact plug; PR p⁺ region; PR1, PR1A, PR2,PR3, PR4, PR5, PR6 photoresist pattern; PS vertical signal line; PWp-type well region; PWS power supply line; PX pixel; RTR transistor forresetting; SL stack film (lower antireflection coating); SL1 lowerinsulating film; SL2 upper insulating film (intermediate insulatingfilm); SL3 upper insulating film; SS selection signal line; STRtransistor for selection; SUB semiconductor substrate; SW sidewall; TStransfer signal line; and TTR transistor for transfer.

1. A method of manufacturing a solid-state image sensing deviceincluding a plurality of photoelectric conversion portions constitutinga plurality of pixels, an insulating gate field effect transistorportion, and a plurality of first films formed on said plurality ofphotoelectric conversion portions respectively and each implementing anantireflection coating, comprising the steps of: forming a stack filmconstituted of a plurality of insulating films so as to cover saidplurality of photoelectric conversion portions and a gate electrodelayer of said insulating gate field effect transistor portion;selectively anisotropically etching said stack film such that said stackfilm remains on each of said plurality of photoelectric conversionportions to form a lower film and such that said stack film remains on asidewall of said gate electrode layer to form a sidewall insulatingfilm; forming a source/drain region of said insulating gate field effecttransistor portion by introducing an impurity into a region not coveredwith said gate electrode layer and said sidewall insulating film;forming an upper film at least on said lower film after introduction ofsaid impurity; and etching at least any of said upper film and saidlower film which are included in said first film such that said firstfilms on at least two photoelectric conversion portions of saidplurality of photoelectric conversion portions are different inthickness from each other.
 2. The method of manufacturing a solid-stateimage sensing device according to claim 1, wherein said step of etchingat least any of said upper film and said lower film includes the step ofetching said lower film after said sidewall insulating film is formedand before said upper film is formed.
 3. The method of manufacturing asolid-state image sensing device according to claim 1, wherein said stepof etching at least any of said upper film and said lower film includesthe step of etching at least said upper film after said upper film isformed.
 4. The method of manufacturing a solid-state image sensingdevice according to claim 3, wherein said step of etching at least anyof said upper film and said lower film includes the step of exposingsaid lower film by etching said upper film and thereafter etchingexposed said lower film.
 5. The method of manufacturing a solid-stateimage sensing device according to claim 1, wherein said plurality ofpixels include a first pixel, a second pixel and a third pixel forsensing images of light having colors different from one another, andsaid step of etching at least any of said upper film and said lower filmincludes the steps of etching respective said lower films on saidphotoelectric conversion portions of both of said second pixel and saidthird pixel while leaving said lower film on said photoelectricconversion portion of said first pixel after said sidewall insulatingfilm is formed and before said upper film is formed, and etching saidupper film on said photoelectric conversion portion of said third pixelafter said upper film is formed.
 6. The method of manufacturing asolid-state image sensing device according to claim 5, wherein said stepof etching at least any of said upper film and said lower film includesthe step of exposing said lower film by etching said upper film of saidthird pixel and thereafter etching exposed said lower film.
 7. Themethod of manufacturing a solid-state image sensing device according toclaim 1, wherein said stack film is formed from an insulating filmconstituted of three or more layers.
 8. The method of manufacturing asolid-state image sensing device according to claim 1, wherein saidupper film is formed from a single-layered silicon nitride film.
 9. Themethod of manufacturing a solid-state image sensing device according toclaim 1, wherein said upper film is formed from a film constituted oftwo or more layers.
 10. The a method of manufacturing a solid-stateimage sensing device according to claim 9, wherein said upper film isformed by stacking a silicon oxide film and a silicon nitride film. 11.The method of manufacturing a solid-state image sensing device accordingto claim 1, wherein said upper film is formed through selective growth.12. The method of manufacturing a solid-state image sensing deviceaccording to claim 1, wherein said step of forming said upper filmincludes the step of forming said upper film so as to cover said gateelectrode layer and said sidewall insulating film, said method furthercomprises the steps of: forming an interlayer insulating film made of amaterial different from that for said upper film so as to cover saidsource/drain region and said upper film after said first film is formed;forming a contact hole exposing a part of said upper film in saidinterlayer insulating film by etching said interlayer insulating filmunder a first condition; and removing said upper film exposed throughsaid contact hole by etching said upper film under a second conditiondifferent from said first condition.
 13. A solid-state image sensingdevice having a first pixel and a second pixel for sensing images oflight of colors different from each other, comprising: a firstphotoelectric conversion portion corresponding to said first pixel; asecond photoelectric conversion portion corresponding to said secondpixel; an insulating gate field effect transistor portion having a gateelectrode layer; two first films formed on said first and secondphotoelectric conversion portions respectively and each implementing anantireflection coating; and a sidewall insulating film formed on asidewall of said gate electrode layer, said first film formed on saidfirst photoelectric conversion portion and said first film formed onsaid second photoelectric conversion portion having structures differentfrom each other, said first film formed on said first photoelectricconversion portion including a lower film and an upper film located onsaid lower film and covering an end surface of a pattern of said lowerfilm, and said sidewall insulating film being implemented by said lowerfilm.
 14. The solid-state image sensing device according to claim 13,wherein said first film formed on said first photoelectric conversionportion has a thickness greater than a width of said sidewall insulatingfilm.